Inverter For Air Conditioner
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251 consists of a GaA?As light emitting diode and a integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.(~15A)
● Input threshold current: IF=5mA(max.)
● Supply current (ICC): 11mA(max.)
● Supply voltage (VCC): 10?35V
● Output current (IO): ±0.4A(max.)
● Switching time (tpLH / tpHL): 1μs(max.)
● Isolation voltage: 2500Vrms(min.)
● UL recognized: UL1577, file no.E67349
● Option(D4)
? ?VDE Approved : DIN EN60747-5-2
? ?Maximum Operating Insulation Voltage : 890VPK
? ?Highest Permissible Over Voltage : 4000VPK
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.