DESCRIPTION
The SFH601 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package.
It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
The coupling device is designed for signal transmission between two electrically separated circuits.
FEATURES
? Isolation test voltage, 5000 VRMS
? Low coupling capacitance
? High common mode transient immunity
? Storage temperature, -55 ° to +150 °C
APPLICATIONS
? Telecom
? Industrial controls
? Battery powered equipment
? Office machines
? Programmable controllers
AGENCY APPROVALS
? UL
? cUL
? DIN EN 60747-5-5 (VDE 0884-5) available with option 1
? CQC
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.