The FT-M452 and FT-M453 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor.
A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The FT-M600, FT-M601 and FT-M611 are consists of an infrared emitting diode optically coupled to a high speed integrated photo detector logic gate with a strobable output. The devices are packaged in a 5-pin small outline package which conforms to the standard footprint.
Features
- High speed 1Mbit/s
- High isolation voltage between input and output (Viso=3750 Vrms )
- High CMR 15KV/us at Vcm = 1500V (ELM453)
- Guaranteed performance from 0°C to 70°C
- Wide operating temperature range of -40°C to 85°C
- Pb free and RoHS and Halogen free compliat
Other Applications
- Line receivers
- Field bus communication and control.
- Power transistor isolation in motor drives.
- Replacement for low speed phototransistor photo couplers.
- High speed logic ground isolation.
- Analog signal ground isolation.
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.
