1.Features
High speed 1 Mbit/s
10kV/ps min. common mode transient immunity
Guaranteed performance from -40 to 100°C
Open collector output
High isolation voltage between input and output
Viso=5000 V rms
In compliance with RoHS, REACH standards
MSL Class Ⅰ
2.Instructions
The FT-88-2530 and FT-88-2531?dual channel devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.
Thephotoelectric coupleroperatingtemperaturerange: - 40 ℃ ~ +110 ℃.
3.Application Range
Line receivers
Telecommunication equipments
Power transistor isolation in motor drives
Replacement for low speed phototransistor photo couplers
Feedback loop in switch-mode power supplies
Home appliances
High speed logic ground isolation
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.
