應(yīng)用領(lǐng)域
● 消除接地環(huán)路
● 將LSTTL轉(zhuǎn)換為TTL，LSTTL或5伏CMOS
● 線路接收器，數(shù)據(jù)傳輸
● 數(shù)據(jù)復(fù)用
● 開關(guān)電源
● 更換脈沖變壓器
● 計算機外圍設(shè)備接口
● 高速邏輯接地隔離
The FT-825 series devices each consists of an infrared emitting diodes, optically coupled to a photo darlington detector.These devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.
Description
These small outline high CMR, high speed, logic gate optocouplers are single channel devices in a five lead miniature footprint.
描述
FT-X2-TLP781是北億纖通研發(fā)的一款小型貼片的光耦產(chǎn)品，適用于表面貼片組裝。FT-X2-TLP781由砷化鎵紅外發(fā)光二極管與帶基極-發(fā)射極電阻的、優(yōu)化了開關(guān)速度和溫度特性的達林頓光電晶體管組成的高壓光電耦合器。
概述
FT-X2-6N137光耦合器由一個850納米的AlGaAS LED和一個集成光電探測器高速邏輯門輸出器件組成。它的封裝形式有DIP-8和SMD-8。一個內(nèi)部噪聲屏蔽提供了典型值為10KV/μs優(yōu)越的共模抑制典型。FT-X2-6N137的最低共模抑制比為5KV/μs。
描述
FT-X2-TLP127是北億纖通研發(fā)的一款小型貼片的光耦產(chǎn)品，適用于表面貼片組裝。FT-X2-TLP127由砷化鎵紅外發(fā)光二極管與帶積分基極-發(fā)射極電阻的達林頓光電晶體管組成的高壓光電耦合器， VCEO達到300V以上。
概述
通用經(jīng)濟型光MOS繼電器FT-X2-AQW21x，有8引腳封裝的雙通道單刀單擲（2 Form A）和4引腳封裝的單通道單刀單擲（1 Form A）可供選用，增強隔離電壓5000V。
描述
FT-X2-PC355是北億纖通研發(fā)的一款小型貼片的光耦產(chǎn)品，適用于表面貼片組裝。FT-X2-PC355由砷化鎵紅外發(fā)光二極管與帶基極-發(fā)射極的達林頓光電晶體管組成的光電耦合器。
北億纖通專業(yè)研發(fā)生產(chǎn):DIP8國產(chǎn)光耦, 是一家專業(yè)的DIP8國產(chǎn)光耦廠家,具有優(yōu)質(zhì)的DIP8國產(chǎn)光耦品質(zhì),有很好的DIP8國產(chǎn)光耦價格,DIP8國產(chǎn)光耦海量交付給國防、軍工、航空、航天、兵器、艦船、雷達、電子、核工業(yè)、軍事、電力、鐵路、醫(yī)療、交通、通信、電信、政府、國防科技工業(yè)系統(tǒng)內(nèi)大專院校及科研院所
The FT-31X0 series consist of an infrared light emitting diodes and integrated high gain, high-speed photo detectors. The device is housed in a 8 pin DIP package.
北億纖通專業(yè)研發(fā)生產(chǎn):SMD8國產(chǎn)光耦, 是一家專業(yè)的SMD8國產(chǎn)光耦廠家,具有優(yōu)質(zhì)的SMD8國產(chǎn)光耦品質(zhì),有很好的SMD8國產(chǎn)光耦價格,SMD8國產(chǎn)光耦海量交付給國防、軍工、航空、航天、兵器、艦船、雷達、電子、核工業(yè)、軍事、電力、鐵路、醫(yī)療、交通、通信、電信、政府、國防科技工業(yè)系統(tǒng)內(nèi)大專院校及科研院所
The FT-S31X0 series consist of an infrared light emitting diodes coupled to an integrated circuit with a power output stage. The photo coupler has an internal shield that provides guaranteed common-mode transient immunity of ±25 kV/μs. It is suitable for direct gate driving circuit for IGBTs or power MOSFETs.
The FT-W3120 consists of an infrared light emitting diodes and integrated high gain, high-speed photo detectors. The device is housed in an 8 pin DIP wide body package and available in SMD package option.
The FT-452-G contains an infrared emitting diode, optically coupled to a high voltage darlington phototransistor. It is packaged in a 4-pin small outline SMD package.
概述:
FT-X2-HCPL3120 是一種 2.5A 輸出電流柵極驅(qū)動光電耦合器， 可驅(qū)動大多數(shù)中功率 IGBT 和 MOSFET。在電機控制逆變器以及高性能電力系統(tǒng)中，其非常適用于快速切換驅(qū)動功率 IGBT 和 MOSFET。
The FT-815 series of devices each consist of an infrared emitting diodes, optically coupled to a photo Darlington detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
應(yīng)用領(lǐng)域
● 隔離IGBT/功率MOSFET柵極驅(qū)動
● 工業(yè)逆變
● 交流無刷和直流電機驅(qū)動器
● 感應(yīng)加熱
● 開關(guān)電源
The FT-113,FT-4NXX and FT-11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
應(yīng)用領(lǐng)域
● 隔離IGBT/功率MOSFET柵極驅(qū)動
● 工業(yè)逆變
● 交流無刷和直流電機驅(qū)動器
● 感應(yīng)加熱
● 開關(guān)電源