The FT-452-G contains an infrared emitting diode, optically coupled to a high voltage darlington phototransistor. It is packaged in a 4-pin small outline SMD package.
Features
● High collect-Emitter voltage (VCEO = 350V)
● Current transfer ratio (CTR: Min. 1000% at IF =1mA VCE =2V)
● High isolation voltage between input and output (Viso=3750 V rms )
● Pb free and RoHS compliant.
Other Applications
● Low power logic circuits
● Telecommunications equipment
● Portable electronics
● Interfacing coupling systems of different potentials and impedances
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.